Shabbir A. Bashar, Ph.D.
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Tel. 510 386 7304 |
Professional Highlights:
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Ph.D. in semiconductor materials and device
electronics, device modeling, fabrication and process development.
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8 years’ “hands-on” industrial work
experience in US (InP, GaAs, GaN, SiC, Si, Ge wafer bonding, APD based sensors,
high brightness LEDs, 1.3mm
FP and DFB telecom lasers, 808nm to 1.9mm high
power semi conductor diode lasers); 2 years’ R&D work experience in UK
(high temperature HBTs).
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Extensive experience in electrical/optical
testing of telecom and high power lasers, PINs, APDs, HPTs, HEMTs, LEDs, as
well as physics based modeling and data management.
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Designed & managed facilities for
Telcordia 468 reliability testing of lasers and APDs; wrote periodic reports
for customers.
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Project team management experience –
engineering, processing and testing (SPC, FMEA); customer management skills
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Over 20 technical publications in peer
reviewed international journals and conferences; two patents (lasers,
wafer-bonding).
Professional Objectives:
Looking for a position that draws on my hands-on
industrial and research experiences in the fields of fabrication, test and
reliability of semiconductor devices and gives me the opportunity to engage in
further professional development while meeting corporate objectives. I seek to work on difficult technical challenges,
I have a strong work ethic, and I enjoy problem solving whether working
independently or as a member of a team.
Educational Background :
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Ph.D. in Electronic Engineering, King’s College,
Thesis titled “Study of Transparent
Indium Tin Oxide (ITO) for Novel Optoelectronic Devices”
(http://www.betelco.com/sb/phd).
·
Gained in-depth understanding of advanced optoelectronic components and
fiber optic telecommunication system technology (transmitters, modulators,
receivers).
·
Developed fabrication processes for photodiodes, HPTs, LEDs and VCSELs
on GaAs, InP, AlGaAs, InGaP and InGaAs.
·
Proficient in characterization and analysis using SEM, AFM, Zygo,
Nanospec, IV, CV, cryogenic, spectral, photo response, r.f. and in automated
measurements.
·
Developed physics based models (SPICE and personally written simulation
programs) for electrical/optical behavior.
·
Over 8 years' hands-on experience of fab technology (class 100
cleanroom, etch and lift-off lithography, thin films, reactive r.f. sputtering,
thermal and e-beam evaporation, chemical etching, RIE, RTA, packaging and
bonding).
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Studied and implemented coherent optical mixers using transparent HPTs
and hetrodyne diode-HEMT detectors for long haul fiber-optic telecommunication
applications.
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B.Eng.(Honors) in Electronic Engineering, King’s
College,
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A-Levels (British
pre-university exams): Math, Chemistry, Physics; (1988).
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O-Levels (High
school exams):
Math, Chemistry, Bengali, Physics, Biology, English Literature, English
Language; (1985).
Work Experience:
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(May 2005 – Sept 2007) Senior Scientist: nLight Photonics Corporation,
5408 NE 88th Street, Bldg E, Vancouver, WA 98665; worked on
low-noise, high-gain InP based Linear and Geiger Mode APDs and arrays for
photon counting and wave-front sensing and imaging applications for defense and
bio-medical products. My responsibilities included device simulation, epi-design,
process development, program management, interaction with collaboration
partners and potential customers, grant proposal submissions and receiver
business development for range finders.
·
(Jan 2004 – May 2005) Director of Technology Development: Group4 Labs, LLC, 1600 Adams
Drive, Suite 112, Menlo Park, CA 94025; worked on various types of wafer
bonding including Si, GaAs, InP, GaN, SiC;
epitaxial layer design and device fabrication for high power lasers for
bio-medical applications; YAG crystal
bonding; CVD diamond for heat sinking.
·
(Mar 2003 - Dec 2003) Senior Photonics Engineer: Advanced Photonics Integrated
Chip (APIC) Inc., 5800 Uplander Way, Suite 200, Culver City, CA 90230; worked
on process development of a low loss silicon waveguide, specifically
realization of vertical, smooth sidewalls with uniform depth on SOI wafers by
dry etching; low temperature (<250°C) wafer bonding of 4” Si, SOI and Ge
wafers including development of wet and dry activation techniques.
· Jan. 1999 – Jan. 2003
Member of Technical Staff: Nova Crystals, Inc.,
Jan. 1999 to Mar. 2000 (reported to CTO) - Worked on the following:
· Development of low threshold 850nm VCSELs based on lateral oxide confinement for optical data communications.
· Chemical-mechanical lapping and polishing of rough GaAs surfaces in preparation for wafer bonding to Si.
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Development of "Metal Plasma LEDs" -
submitted
· Process development, proto-typing, back-end packaging of high brightness red and blue LEDs on AlInGaP and GaN.
Mar. 2000 to mid Oct. 2000 - Cleanroom Construction (reported
to the COO):
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Layout design for cleanroom facility(app. Value: US$ 3,500,000.00) and
Processing equipment procurement including selection and testing prior to
purchase (app. Value: US$ 2,000,000.00);
May 2000 to Dec. 2000 – Photonic Integrated
Circuit Surface Emitting Laser (PICSEL) R&D, Testing (reported to CTO):
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Demonstrated proof of concept; involved wafer lapping and polishing,
development of automated cleaving, packaging, device testing, screening and
extracting electrical, beam profile, thermal and spectral characteristics
Sept. 2000 to Mar 2001 - Set up Test Laboratory (reported
to COO & CTO):
·
Selection and purchase of DC and high speed equipment (app. Value:
US$1,500,000.00)
April 2001 to Jan 2003 - Manufacturing DC Test System
Development (reported to VP of Engineering):
·
Developed high throughput DC (CW, pulsed LIV, spectrum, beam profile
etc.,) screening station from basic concepts to concrete working system
including development of test methodologies for high volume screening (app.
Value: US$250,000.00).
March 2001 to Jan ‘03 - Life Test & Reliability
System Development (reported to VP of Engineering):
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Developed unique laser and APD life test systems from basic concepts
that allow the in-situ and automatic monitoring of device parameters for
thousands of hours (app. Value: US$350,000.00).
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Set up and initiated the in-house Telcordia (468) Standard test
capability (85/85, temp cycling, life test, mechanical and ESD tests). I was responsible for preparing formal
Telcordia reliability reports for each product.
March 2001 to Jan ‘03 - Internal Consulting:
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Designed the process control monitor cell leading to the understanding
and control over parasitic resistance and leakage current issues in Nova’s
design and manufacturing processing steps.
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Played a key role in understanding and resolving isolation issues with
the internal Photo Diode (both p-p and n-n) and photo current saturation
problems
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Characterized and solved thermal impedance issues
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(Jan 1999 - Feb 2000) Visiting Scientist: Department of Electrical
Engineering, Cornell University, Ithaca, NY 14853; worked at the
Nano-fabrication Lab, Packaging Lab and the Center for Materials Research;
gained extensive hands-on experience with wet and dry oxidation techniques (for
achieving ultra-thin tunneling barriers) and ion milling.
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(1995 - 1997) Research Associate: Employed on an EPSRC project for the
development of “GaAs based HBTs
for High Temperature Applications” (beyond 300°C) at King’s College in collaboration
with Defense Evaluation Research Agency.
Duties involved:
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· Experimenting with suitable
III-V materials · Development of rugged novel
ohmic contacts · Comparison between single
and double HBTs |
· Wafer design, device
fabrication, characterization · Temperature/current stress
reliability analysis |
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(1992 - 1995) Sub-Warden: International Hall,
Awards, grants received
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1994 - 1995 ·
1993 - 1994 ·
1983 - 1984 ·
1981 - 1983 |
Post
Doctoral Research Strategy Grant, King’s College London First
Prize, Postgraduate Competition, King’s College London Astronomy Prize, De |
Other Skills and Responsibilities:
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Computer literacy: PASCAL, VISUAL BASIC, LEdit, DW 2000, (familiarity with NI LabView);
expert level user of MS OfficeTM (Access, Excel and their
integration with external databases), MS ProjectTM and graphics
software (Photo Shop, Corel Draw);
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Volunteering: Mentoring high school
seniors for Advanced Placement for Physics tests,
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Inter-personal: President,
International Hall (dorms), University of London (‘90-’91); International Hall Treasurer (‘89 -
‘90); Chief Editor, International Hall Yearbook (‘89 - ‘93); Vice-Captain
of International Hall Hockey Team (‘90 - ‘93);
Rossall Award Leader - outdoor pursuits for VIth formers -
(‘86 - ‘87); De La Salle College Prefect (‘84 - ‘85).
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Languages: English (fluent), Bengali (mother tongue),
Arabic (conversational)
Interests : Soccer,
Camping, hiking,
traveling, skiing, still-photography, literature, current affairs, running and
field hockey. Volunteer member of
Fremont “Community Emergency Response Team (CERT)” since May 2000.
References:Available
upon request.
1.
“Integrated surface-emitting laser and modulator device”, Y. H. Lo, Z.
Zhu and S. Bashar; granted on October 1st, 2002; no. 6,459,716
2.
“(WO/2007/084501) Method for Manufacturng Smooth Diamond Heat Sinks”,
D. Francis, F. Ejeckam, S. Bashar, D. Babic, July 2007
3.
“Optically Transparent Indium Tin Oxide (ITO) Ohmic Contacts in the
Fabrications of Vertical Cavity Surface-Emitting Lasers”,
4.
“Optically Transparent ITO
Emitter Contacts in the Fabrication of InP/InGaAs HPTs”, S. A. Bashar and A. A.
Rezazadeh, IEEE Transactions on Microwave Theory and Techniques, Vol.43(9), 1995, pp.2299-2303
5.
“Fabrication and Spectral
Response Analysis of AlGaAs/GaAs and InP/InGaAs HPTs with Transparent ITO
Emitter Contacts”, S. A. Bashar and A. A. Rezazadeh, IEE Proceedings on
Opto-electronics, Vol. 143,
Issue 1, (February) 1996, pp. 89-93
6.
“InP Based HBTs for Optical
Telecommunications - Invited Paper”, A. A. Rezazadeh, H. Sheng & S. Bashar,
International
Journal of Optoelectronics, Vol. 10,
no. 6, 1996, pp. 489-493
7.
“Reliability Investigation of
InGaP/GaAs HBTs Under Current and Temperature Stress - Invited Paper”, A. A.
Rezazadeh, S. A. Bashar, H. Sheng, F. A. Amin, A. H. Khalid, M. Sotoodeh, M. A.
Crouch, L. Cattani, F. Fantini and J. J. Liou, Journal of Microelectronics
Reliability, Vol. 39, No. 12, 1999, pp. 1809-1816
8.
“Oxide-Defined GaAs
Vertical-Cavity Surface-Emitting Lasers on Si Substrates”, Y. Xiong, Y. Zhou,
Z. H. Zhu, Y. -H. Lo, C. Ji, S. A. Bashar, A. A. Allerman, T. Hargett, R. Sieg,
and K. D. Choquette, IEEE Photonics Technology Letters, Vol. 12,
no. 2, 2000, pp.110-112.
Publications
in Technical Conferences, Colloquium and Workshop Proceedings
1.
“Realization of Fast Photoreceivers Based on ITO/n-GaAs Schottky
Diodes”, S. Bashar & A. A. Rezazadeh, Proceedings of IEE Colloquium on Optical
Detectors & Receivers, London,
October, 1993
2.
“Transparent Indium Tin Oxide
(ITO) Ohmic Contacts to both p and n GaAs for Surface-emitting Lasers”, A. F.
Jezierski,
3.
“Transparent Contacts to
Opto-Electronic Devices Using Indium Tin Oxide (ITO)”, S. Bashar & A. A.
Rezazadeh, Proceedings of IEEE International Conference on Telecommunications -
ICT, Dubai, UAE, 10th-12th January, 1994, pp.
259-261
4.
“Prospects of InP Based HBTs for
Optical Telecommunications”, S. Bashar, H. Sheng & A. A. Rezazadeh, Proceedings
of IEEE International Workshop on High Performance Electron Devices for
Microwave & Optoelectronic Applications - EDMO, London, Nov., ‘94,
pp. 1-6
5.
“Fabrication and
Characterisation of a Transparent Gate HEMT Using Indium Tin Oxide”, A. H.
Khalid, S. A. Bashar & A. A. Rezazadeh, EDMO, London, Nov., 1994,
pp. 99-104
6.
“Transparent Emitter Contacts to
InP/InGaAs HPTs for Long Haul Optical Telecommunications Applications”, S. A.
Bashar & A. A. Rezazadeh, ICT,
7.
“Analysis and Modeling of
Spectral Response for GaAs Schottky Diodes and InP/InGaAs HPTs Fabricated Using
Indium Tin Oxide”, S. A. Bashar & A. A. Rezazadeh, Proceedings of The 5th European
Heterostructure Workshop,
8.
“Characterisation of Transparent
ITO Emitter Contact InP/InGaAs Heterojunction Bipolar Transistors”, S. A.
Bashar & A. A. Rezazadeh, EDMO, London, Nov., 1995, pp. 76 -
81
9.
“Noise Properties of AlGaAs/GaAs
HPTs with Transparent ITO Emitter Contacts”, N. B. Lukyanchikova, N. P. Garbar,
M. V. Petrichuk, A. A. Rezazadeh & S. A. Bashar, EDMO, Leeds, UK, 25th
- 26th November, 1996, pp. 50
- 55
10. “Characteristics of AlGaAs/GaAs and InGaP/GaAs
HBTs at High Temperature”, S. A. Bashar, F. A. Amin, A. A. Rezazadeh and M. A.
Crouch, - EDMO,
11. “Effect of Base Metal Contacts on the
Performance of InGaP/GaAs HBTs under Temperature and Bias Stress”, S. A.
Bashar, H. Sheng, F. A. Amin, A. A. Rezazadeh, M. A. Crouch, F. Adami and L.
Cattani, EDMO,
12. “Noise Characterization of AlGaAs/GaAs HBTs
with Different Emitter Contacts”, N. B. Lukyanchikova, N. P. Garbar, M. V.
Petrichuk, A. A. Rezazadeh & S. A. Bashar, EDMO, London, UK, 24th
- 25th November, 1997, pp.
157 – 162
13. "Design and Realization
of InP-based HBTs for Optical Telecommunications", A A Rezazadeh, S Sheng,
S A Bashar and D Wake, IEE Colloquium on Opto-Electronic Interfacing at
Microwave Frequencies, Savoy Place, London, 20 April 1999, pp4/1 -4/7
(ref: 99/045).
14. "850nm vertical-cavity
surface-emitting lasers on Si substrates", Y. Zhou, Y. Xiong, Y.-H. Lo; C.
Ji, Z.H. Zhu, S.A. Bashar, A.A. Allerman, T. Hargett, R. Sieg and K.D.
Choquette, NATO’s Conference Proceedings (WOFE), 1999.
15. "Room temperature
stress-free GaAs/Si wafer bonding technology for optical interconnects",
Y.-H. Lo, Y. Xiong, Y. Zhou, Z.H. Zhu, Tuoh-Bin Ng and S. A. Bashar, HOTC
(Heterogeneous Optoelectronics Technology Center) Newsletters,
May, 1999.
16. "Bias and Temperature
Stress Reliability of InGaP/GaAs HBTs", A. A. Rezazadeh, S.A. Bashar, H.
Sheng, F.A. Amin, L. Cattani and J.J. Liou, Proceedings of International
Reliability Physics Symposium, San Jose, USA, 10th - 13th April, 2000.
17. "High Temperature and
Isolator-free 1310nm Photonic Integrated Surface Emitter Operating at 2.5Gb/s
Over 25km Transmission", M. Choy, W. Yeo, T. Eustis, J. Chaung, S. A.
Bashar, J. Bergevin, G. Tarsha, S. Hu, Tuoh-Bin Ng, S. Zaytsev, J. Erickson, D.
Tsou, L. Boman, S. Hummel, D. Sinclair and Y. H. Lo, IEEE Optical Fiber
Communication Conference, Anaheim, USA, 17th - 22nd March, 2002, pp.
719-721.
B.Eng.(Honors)
Course Contents (1988-1991): Final year individual project on the “Fabrication
and Reliability of Schottky Diodes.”
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