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Stanford Nanofabrication Facility webmaster@snf.stanford.edu Last Modified 03/20/2008 |
The following programs should NOT be changed!
STANDARD DEVELOP PROGRAMS TRACKS 1 (back) & 2 (front)
NEW:
STATION: DEVELOP PROGRAM #2: Shipley SPR 955 CM-.7 Resist 0.7 µm and 1.0µm
(dispenser
1 MF-26A surfactant)
Event Operation Time Speed Accel 1 SPIN 01.0 5.00 20 2 SPRAY1 02.0 1.00 20 3 STREAM1 03.0 0.08 20 4 SPIN 22.0 0.00 20 5 RINSE 5.0 0.80 20 6 STREAM1 01.0 0.08 20 7 SPIN 22.0 0.00 20 8 RINSE 15.0 0.80 20 9 SPIN 20.0 5.00 20
Following 3 steps are necessary for the development of the I Line resist Shipley SPR 955 CM-.7:
1.step: Bake Prog#3 for PEB (Post Exposure Bake) 90 seconds
2.step: Develop Prog#2 or Prog#5
3.step: Bake Prog#1 for hardbake 60 seconds
STATION: DEVELOP PROGRAM #5: Shipley SPR 955 CM-.7 Resist 0.7 µm and 1.0µm
(dispenser 1 MF-26A surfactant)
Event Operation Time Speed Accel 1 SPIN 01.0 5.00 20 2 SPRAY1 02.0 1.00 20 3 STREAM1 03.0 0.08 20 4 SPIN 22.0 0.00 20 5 SPRY1 5.0 0.80 20 6 STREAM1 01.0 0.08 20 7 SPIN 22.0 0.00 20 8 RINSE 15.0 0.80 20 9 SPIN 20.0 5.00 20
Following 3 steps are necessary for the development of the I Line resist Shipley SPR 955 CM-.7:
1.step: Bake Prog#3 for PEB (Post Exposure Bake) 90 seconds
2.step: Develop Prog#2 or Prog#5
3.step: Bake Prog#1 for hardbake 60 seconds
STATION: DEVELOP PROGRAM #3: 3612 RESIST 1.0µm (dispenser 2 LDD26W)
|
Event |
Operation |
Time |
Speed |
Accel |
|
1 |
SPIN |
01.0 |
5.00 |
20 |
|
2 |
SPRAY2 |
02.0 |
1.00 |
20 |
|
3 |
STREAM2 |
03.0 |
0.08 |
20 |
|
4 |
SPIN |
30.0 |
0.00 |
20 |
|
5 |
RINSE |
10.0 |
0.80 |
20 |
|
6 |
STREAM2 |
03.0 |
0.08 |
20 |
|
7 |
SPIN |
30.0 |
0.00 |
20 |
|
8 |
RINSE |
15.0 |
0.80 |
20 |
|
9 |
SPIN |
20.0 |
5.00 |
20 |
STATION: DEVELOP PROGRAM #4 3612
RESIST 1.6µm (dispenser 2 LDD26W)
|
Event |
Operation |
Time |
Speed |
Accel |
|
1 |
SPIN |
01.0 |
5.00 |
20 |
|
2 |
SPRAY2 |
02.0 |
1.00 |
20 |
|
3 |
STREAM2 |
03.0 |
0.08 |
20 |
|
4 |
SPIN |
60.0 |
0.00 |
20 |
|
5 |
RINSE |
10.0 |
0.80 |
20 |
|
6 |
STREAM2 |
03.0 |
0.08 |
20 |
|
7 |
SPIN |
60.0 |
0.00 |
20 |
|
8 |
RINSE |
15.0 |
0.80 |
20 |
|
9 |
SPIN |
20.0 |
5.00 |
20 |
STATION: DEVELOP PROGRAM #6 SPR220-7
RESIST 7µm (dispenser 2 LDD26W)
|
Event |
Operation |
Time |
Speed |
Accel |
|
1 |
STREAM2 |
10.0 |
0.08 |
20 |
|
2 |
SPIN |
99.9 |
0.00 |
20 |
|
3 |
STREAM2 |
10.0 |
0.08 |
20 |
|
4 |
SPIN |
99.9 |
0.00 |
20 |
|
5 |
STREAM2 |
10.0 |
0.08 |
20 |
|
6 |
SPIN |
99.9 |
0.00 |
20 |
|
7 |
SPRAY2 |
15.0 |
0.80 |
20 |
|
8 |
RINSE |
20.0 |
0.80 |
20 |
|
9 |
SPIN |
20.0 |
5.00 |
50 |
STATION: DEVELOP PROGRAM #7 SPR220-3
RESIST 3 - 4 µm (dispenser 2 LDD26W)
|
Event |
Operation |
Time |
Speed |
Accel |
|
1 |
STREAM2 |
10.0 |
0.08 |
20 |
|
2 |
SPIN |
70.0 |
0.00 |
20 |
|
3 |
STREAM2 |
10.0 |
0.08 |
20 |
|
4 |
SPIN |
99.9 |
0.00 |
20 |
|
5 |
STREAM2 |
10.0 |
0.08 |
20 |
|
6 |
SPIN |
70.0 |
0.00 |
20 |
|
7 |
SPRAY2 |
15.0 |
0.80 |
20 |
|
8 |
RINSE |
20.0 |
0.80 |
20 |
|
9 |
SPIN |
20.0 |
5.00 |
50 |
STANDARD BAKE PROGRAMS TRACK 1 and 2
STATION: BAKE PROGRAM #1 ( for coat Program#7 3612 1.0 µm) TEMP 110°C
|
Event |
Operation |
Time |
|
1 |
BAKE |
60.0 |
|
2 |
END |
0 |
STATION: BAKE PROGRAM #2 ( for coat Program #8 3612 1.6 µm) TEMP 110°C
|
Event |
Operation |
Time |
|
1 |
BAKE |
120.0 |
|
2 |
END |
0 |
STATION: BAKE PROGRAM #3 ( for coat Program #5 SPR 955 CM-.7 0.7 or 1 µm) TEMP 110°C
Event |
Operation |
Time |
1 |
BAKE |
90.0 |
2 |
END |
0 |
Comment:
For SPR220-3 and SPR220-7 resists is no bake after development required!
Bake programs can be used for PEB (Post Exposure Bake):
Bake Prog #1 for 1µm SPR3612 resist
Bake Prog #2 for 1.6µm SPR3612 resist
Bake Prog #3 for 0.7 or 1 µm SPR 955 CM-.7 resist
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_______________________________________________________________
Stanford Nanofabrication Facility webmaster@snf.stanford.edu Last Modified 03/20/2008 |