Si₃N₄ is deposited at moderately high temperatures (~800C) and low pressure (~250 mtorr), using dichlorosilane (SiCl₂H₂) and ammonia (NH₃). The deposition rate roughly ~30A/min for 4 inch wafers and ~35A/min for 3 inch wafers (depending on the specific recipe used and loading.).

Several different nitride deposition recipes are offered, which differ primarily in the resulting film stress value. For specific information about the recommended low stress nitride recipe (LSN850) which included recommended procedures for film characterization, please refer to the characterization report (courtesy of Eehern Wong.) [Note: this is a <PDF> file.]