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| Polycrystalline silicon (or poly-Si) is deposited at a low pressure (~500 mtorr) using silane (SiH4). The tube has a sloping temperature profile. Deposition temperature is ~620C for polysilicon and ~560C for amorphous silicon. The deposition rate for poly silicon is ~125A/minute for 3 inch wafers and ~137A/minute for 4 inch wafers. |
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Stanford Nanofabrication Facility Last Modified 08/29/2003 |
