Overview of Photolithography Tools

Aligner/Steppers

Name
Ultratech 1000
Karl Suss
EV 620
Nikon NSR
Type
1:1 Stepper
Contact
Contact/Prox
5:1 Stepper
Mask Size
3X5"
4" and 5"
5"
5"
Wafer Size
4" *
pieces-4"**
4"
4"
Maximum
Exposure Area
sq. = 10 x 10 mm.
rect = 21 x 7.2 mm
5" mask = 4"
4" mask = 3"
4" diameter
4"array
Obj. Separation
10- 21mm***
50-100mm
65mm
~ mininum resolution
1.25um lens rated****
1um
1um
.6um
Additional Features
Site-by-site stepper
Backside align
Anodic Bond,backside align
5:1 reduct.

Exposure Information

* 6 inch manual loader is also available.
** 4 inch diameter is the maximum
*** Aperture separation
**** Down to 0.8um can be achieved in isolated circumstances.


Spinners

Name
SVG
Laurel
Headway
Type
Auto/Manual Track
Manual
Manual
Wafer Size
4"
Pieces and substrates to 6"
pieces to 6", and 5"plates
Other Features
Dispenses photoresist adhesion promoters, and pre/postbakes. Manual application of photoresist Manual application of photoresist

 

Ovens

Temperature
90C
110C
150C
Programmable (up to 350C)
Type
Convection in N2
Convection in N2
Convection in N2
Convection in N2
Function
Prebake
Postbake
Singe
Cure

See process pages for more specific litho processing information. Return to Equipment page for information on specific tools.


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Stanford Nanofabrication Facility
Last Modified 08/29/2003