Plasma Etching Equipment Overview

Equipment Name	Primary Etched Material	Standard Recipes	Gases Available	Wafer Size	Max. Load (wf)
Applied P5000	Aluminum, oxide, poly	Aluminum	Ar, BCl3, CF4, C4F8, CH3, Cl2, N2, O2, SF6	4"	4
Amtetcher	Oxide	Oxide:Thermal, LTO, Via Etch, Planerization, Nitride, Polymer Clean	O2, CHF3, SF6, Ar, NF3	4"	24
Drytek1	Poly, Nitride	Isotropic Poly, Anisotropic Poly, Nitride, Si Trench, TiW, Resist Harden, Descum	O2, CF4, SF6, C2ClF5, CBrF3	4"	1
Drytek2	Poly, Nitride	Isotropic Poly, Anisotropic Poly, Nitride, Si Trench, TiW, Resist Harden, Descum	O2, CF4, SF6, C2ClF5, CBrF3	4"	6
Drytek4	Oxide and nitride on GaAs	Oxide, nitride	O2, CF4, CHF3, Ar, C2ClF5, CBrF3	4" - 6"	1
LamPoly	Poly, Shallow Si	Poly, Shallow Si, Trench	Ar, N2, O2, 20% O2 in He, CF4, C2F6, HBr, SF6	4"	25
Matrix	Photoresist	Resist	O2	3" or 4"	25
MRC Etcher	Miscellaneous	Miscellaneous	O2, CF4, SF6, Freon115, Ar	4" - 6"	1
PlasmaQuest	GaAs	GaAs	Ar, N2, O2, CF4, Cl2, CH4, He, H2, SF6, BCl3, SiH4	4"	1
STS DRIE etch	Deep Silicon	Deep Si Shallow Si	Ar, C4F8, O2, N2, SF6	4"	1

Note: Some of the above listed equipment may have materials policies and/or restrictions that prohibit use of other equipment .