Litho test

Start with 16 Ltest wafers

Yes oven all the wafers:

Or do it in two batches, wafers for Svgtrack1 and Svgtrack2

SVG track1

Run two wafers on Svg track1 with program 9, 7, 1 ( 1 um)

Check for:

Resist uniformity, speed boat

EBR (good, uniform ring around the wafers)

EBR back splash

Back of wafer should be clean and free of resist

Measure resists thickness on Nanospec with program 10

Top, center, flat, left, right and record the data

Spec for resist thickness should be 10200A +/- 300A

Expose one wafer on karlsuss1 with Resolution mask (Exposer suggestion .9 to 1.1 seconds)

PEB at svgdev1 for 60 seconds

Develop at SVGdev1 with program 3,1

Inspect for 1.5 um L/S resolved on all top, center, flat, left and right

Log your observations

Run two wafers on Svg track1 with program 9, 8, 2 ( 1.6 um)

Check for:

Resist uniformity, speed boat

EBR (good, uniform ring around the wafers)

EBR back splash

Back of wafer should be clean and free of resist

Measure resists thickness on Nanospec with program 10

Top, center, flat, left, right and record the data

Thickness measurement should be 1.7 um +/- 300 A

Expose one wafer on karlsuss2 with Resolution mask (Exposer suggestion 1.4 to 1.7 seconds)

PEB at svgdev2 for 90 seconds

Develop at SVGdev2 with program 4,2

Inspect for 1.5 um L/S resolved on all top, center, flat, left and right

Log your observations

Run two wafers on Svg track1 with program 9, 4, 3 ( 7 um )

Check for:

Resist uniformity, speed boat

EBR (good, uniform ring around the wafers)

EBR back splash

Back of wafers should be clean and free of resist

Measure resists thickness on Nanospec with program 10

Top, center, flat, left, right and record the data

Thickness measurement should be 7.1 um to 7.4 um

4 hours wait is required, leave wafers in the litho area

Expose one wafer on karlsuss2 with Resolution mask (Exposer suggestion 6to 9 seconds)

Develop at SVGdev2 with program 6

Inspect for 3 um and 3.5 um L/S are resolved on all top, center, flat, left and right

Log your observation

Run two wafers on Svg track1 with program 9, 4, 3 (10 um)

Check for:

Resist uniformity, speed boat

EBR (good, uniform ring around the wafers)

EBR back splash

Back of wafer should be clean and free of resist

Measure resists thickness on Nanospec with program 13 (need to enter the RI of 1.63)

Top, center, flat, left, right and record the data

4 hours or more wait is required; leave wafers in the litho area

Expose one wafer on karlsuss1 with Resolution mask (Exposer suggestion 9to 11 seconds)

Develop at SVGdev2 with program 6

Inspect for 3 to 5 um L/S are resolved on all top, center, flat, left and right

Log your observation

SVG track2

Run two wafers on Svg track2 with program 9, 7, 1 ( 1 um)

Check for:

Resist uniformity, speed boat

EBR (good, uniform ring around the wafers)

EBR back splash

Back of wafer should be clean and free of resist

Measure resists thickness on Nanospec with program 10

Top, center, flat, left, right and record the data

Thickness measurement should be 10200A +/- 300A

Expose one wafer on Evaligner with Resolution mask (Exposer suggestion .9 to 1.1 seconds)

PEB at svgdev1 for 60 seconds

Develop at SVGdev1 with program 3,1

Inspect for 1.5 um resolved on all top, center, flat, left and right

Log your observations

Run two wafers on Svg track2 with program 9, 8, 2 (1.6 um)

Check for:

Resist uniformity, speed boat

EBR (good, uniform ring around the wafers)

EBR back splash

Back of wafer should be clean and free of resist

Measure resists thickness on Nanospec with program 10

Top, center, flat, left, right and record the data

Thickness measurement should be 1.7 um +/- 300A

Expose one wafer on Evaligner with Resolution mask (Exposer suggestion 1.4 to 1.7 seconds)

PEB at svgdev2 for 90 seconds

Develop at SVGdev2 with program 4,2

Inspect for 1.5 um resolved on all top, center, flat, left and right

Log your observations

Run two wafers on Svg track2 with program 9, 3, 3 ( 3 um)

Check for:

Resist uniformity, speed boat

EBR (good, uniform ring around the wafers)

EBR back splash

Back of wafer should be clean and free of resist

Measure resists thickness on Nanospec with program 10

Top, center, flat, left, right and record the data

Thickness measurement should be 3 to 3.2 um

Expose one wafer on Evaligner/karlsuss with Resolution mask (Exposer suggestion 3 to 4 seconds)

PEB at svgdev1 for 90 seconds optional

Develop at SVGdev1 with program 7

Inspect for 2.5 to 3 um resolved on all top, center, flat, left and right

Log your observations

Run two wafers on Svg track2 with program 9, 6, 1 (1.2 um) for Glass/quartz

Check for:

Resist uniformity, speed boat

EBR (good, uniform ring around the wafers)

EBR back splash

Back of wafer should be clean and free of resist

Measure resists thickness on Nanospec with program 10

Top, center, flat, left, right and record the data

Expose one wafer on Evaligner/karlsuss with Resolution mask (Exposer suggestion 1.2 to 1.5 seconds)

PEB at svgdev1 for 90 seconds optional

Develop at SVGdev1 with program 3,1

Inspect for 1.5 um resolved on all top, center, flat, left and right

Log your observations

Ultratechs:

It gets routinely checked with the focus mask and we are able to do two layer process on that test.

Nikon B4:

We do test the system for alignment with overlay test and I do run si wafers and do a quick test once in a while.

EV Bonder:

I do test the system by running an anodic bond recipe when the system has come up from being down or any reported problem. The system gets tested every time I do training on it as well.

Hot plates and ovens:

All the hotplates and ovens in the litho area will get monitored monthly and results gets published in the Litho link on our web site.