PHOTORESIST STRIP

I. STANDARD SHIPLEY 3612 RESIST STRIP FOR NON-METAL WAFERS

wetbench = wbnonmetal

  • time = 20:00 minutes
  • temperature = 120°C
  • chemical = 9:1 H2SO4:H2O2

    II. RESIST STRIP FOR HEAVY DOSE AND/OR HIGH ENERGY IMPLANTS FOR NON-METAL WAFERS

    Matrix O2 asher = matrix

  • time = 90 seconds
  • program = STD02STR
  • temperature = 190°C

    wetbench = wbnonmetal

  • time = 20:00 minutes
  • temperature = 120°C
  • chemical = 9:1 H2SO4:H2O2

    Repeat Matrix step and Sulfuric Peroxide Strip if necessary.


    III. STANDARD SHIPLEY 3612 RESIST STRIP FOR METAL WAFERS

    wetbench = wbmetal

  • time = 20:00 minutes
  • temperature = 40°C
  • chemical = PRX 127
  • dump rinse
  • spin dry

    Note: Wafers must go into stripper dry.


    IV. STANDARD SHIPLEY 3612 RESIST STRIP FOR METAL WAFERS AFTER AMT ETCH

    Polymer Strip : this process is to remove polymer buildup from the amtetcher. If not removed, the resist will not strip.

    Drytek2 - program = contact cleanup process

  • Pressure: 150 mtorr
  • F115 flow: 100sccm
  • RF Power: 500 watts
  • Time: 30 seconds

    Resist Strip:

  • wetbench = wbmetal
  • time = 20:00 minutes
  • temperature = 40°C
  • chemical = PRX 127
  • dump rinse
  • spin dry

    Note: Wafers must go into stripper dry.

    Matrix:

  • time = 90 seconds
  • program = STD02STR

    Resist Strip:

  • wetbench = wbmetal
  • time = 20:00 minutes
  • temperature = 40°C
  • chemical = PRX 127
  • dump rinse
  • spin dry

    Note: Wafers must go into stripper dry.


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    Stanford Nanofabrication Facility
    Last Modified 08/29/2003