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Diffusion
Wet Bench (wbdiff)
General
Use Wet Bench (wbgeneral)
Silicide Wet Bench (wbsilicide)
STANDARD PREDIFFUSION CLEAN INFORMATION
WHO NEEDS IT?
- Wafers should not have metal on them when getting
this clean. Depending on where the clean will be done and where the wafers
are going after, the wafers could have had the metal removed or had it turned
to silicide prior to this clean (see section below "Where should I do
it?" for details).
- Standard prediffusion clean should be done on
wafers that are going into furnaces, LPCVD systems or metal deposition.
- Wafers should be loaded into the furnace or deposition
within one hour of the clean process. If they sit longer than one hour they
MUST be RECLEANED.
- Wafers with resist on them should get resist
strip before going into prediffusion clean.
- IMPORTANT NOTE: Never touch your wafers.
If you do they must be thrown away because there is no clean that can remove
the contaminants left by fingerprints.
WHAT IS THE PROCESS
- 4:1 H2SO4:H2O2
@90C for 10 minutes.
- Dump Rinse (std 6 cycles) OR overflow
rinse for 5 minutes (if at wbgeneral)
- 50:1 HF dip for 15 - 30 seconds
- Dump Rinse (std 6 cycles) OR overflow
rinse for 5 minute (if at wbgeneral)
- 5:1:1 H2O:H2O2:HCl
@70C for 10 minutes.
- Dump Rinse (std 6 cycles) OR overflow
rinse for 5 minutes (if at wbgeneral)
- Spin Dry (280 seconds rinse; 120 seconds spin
dry; Auto Mode; >16 ohm-cm Rs on DI H2O) OR if
you are using wafers that do not fit into a spin dryer or a wetbench that
does not have one blow dry the wafers on clean room lint free papers
using a N2 gun.
VARIATIONS?
- If you are going to metal deposition or
an LPCVD deposition you should do the HF dip last. This prevents
an oxide from being between the silicon and the metal deposition. It prevents
the LPCVD films from having a HAZY deposition.
- In the previous case, some people prefer to do
two HF dips (the one that is in the middle of the clean process to
remove the chemical oxide before going into the 5:1:1 H2O:H2O2:HCl
bath AND to do the HF dip last to get the chemical oxide off before
metal deposition and LPCVD.
- When cleaning thin very thin gate oxides, you
may want to minimize or eliminate the HF dip step (to preserve the oxide),
but keep in mind the possibility of bad contact to metal layers or hazy depositions.
HOW DOES IT WORK?
- The H2SO4:H2O2
(Sulfuric Peroxide) solution removes the organic contaminants from
the wafers.
- The HF dip removes the chemical oxide
put on during the Sulfuric Peroxide step.
- The H2O:HCl:H2O2
removes any metal contaminants that might be on the wafer (it is most
effective if done after stripping off the chemical oxide).
- When an HF dip is done last it removes the chemical
oxide put on by the previous clean step.
WHERE SHOULD I DO IT?
- The process is used to clean wafers that do not
have metal on them.
- If the wafers have never had metal on them or
been in any metal contaminated equipment the clean would be done at the wbdiff
(,4", 3", 2" wafers) OR at wbgeneral
in designated nonmetal quartz beakers (nonstandard sized wafers
or pieces of wafers). Wafers cleaned this way could go into nonmetal furnaces
(i.e. tylan1-6, tylanbpsg (nonmetal side), tylanpoly, tylannitride).
- If they had "standard metals"
on them but it was stripped off, the wafers would get cleaned at the wbsilicide.
(4", 3", 2" wafers) OR wbgeneral
in designated std metal ONLY quartz beakers (nonstandard sized
wafers or pieces of wafers). NOTE: "standard metals" are Al, W and
Ti. Wafers cleaned this way could go into "standard metal" furnaces
ONLY (i.e. tylan7, tylanfga, tylanbpsg (metal side only).
- NOTE: There is a cassette available at wgdiff,
wbsilicide, wbnonmetal and wbmetal for cleaning 6 " wafers.
- NON-Standard Metal: If your wafers had non-standard
metals (Al, Ti and W are "standard metals" so all other metals are
non-standard) on them or were exposed to equipment or beakers that are contaminated
with non-standard metals you should clean them at the wbgeneral
in your own clearly labeled equipment that allows those materials (see Materials
allowed for details). NOTE: the gold designated Pyrex beakers at the wbgeneral
may be used if the equipment you need to use allows gold and other non-standard
metals (do not do an HF dip in Pyrex beakers though because you will get contaminants
from the beakers on your wafers -- sodium, boron, etc....).
_______________________________________________________________
Stanford Nanofabrication Facility
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Last Modified
08/29/2003
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